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BAV200 / 201 / 202 / 203
Switching Diode
Features
Silicon Epitaxial Planar Diodes
Applications
General purposes
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black
Absolute Maximum Ratings
Parameter Peak reverse voltage Test Condition
( Tamb=25oC unless otherwise specified )
Part BAV200 BAV201 BAV202 BAV203
Symbol VRRM VRRM VRRM VRRM VR VR VR VR IF IFSM IFM
Value 60 120 200 250 50 100 150 200 250 1 625
Unit V V V V V V V V mA A mA
Reverse voltage
BAV200 BAV201 BAV202 BAV203
Forward current Peak forward surge current Forward peak current tp= 1 s, Tj=25oC f=50Hz
Thermal Characteristics
Parameter Junction ambient Junction temperature Stroage temperature range Test Condition on PC board 50 mm X 50mm X 1.6mm
( Tamb=25oC unless otherwise specified )
Symbol RthJA Tj Tstg Value 500 175 -65 to +175 Unit K/W
o o
C C
Electrical Characteristics
Parameter Forward voltage Reverse current VR=50V VR=100V VR=150V VR=200V Tj=100oC, VR=50V Tj=100oC, VR=100V Tj=100oC, VR=150V Tj=100oC, VR=200V Breakdown voltage IR=100uA, tp/T=0.01, tp=0.3ms IR=100uA, tp/T=0.01, tp=0.3ms IR=100uA, tp/T=0.01, tp=0.3ms IR=100uA, tp/T=0.01, tp=0.3ms Diode capacitance Differential forward resistance Reverse recovery time VR=0, f=1MHz IF=10mA IF=IR=30mA, iR=3mA, RL=100 Test Condition IF=100mA BAV200 BAV201 BAV202 BAV203 BAV200 BAV201 BAV202 BAV203 BAV200 BAV201 BAV202 BAV203 Part Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf trr
( Tamb=25oC unless otherwise specified )
Min. Typ. Max. 1 100 100 100 100 15 15 15 15 60 120 200 250 1.5 5 50 Unit V nA nA nA nA uA uA uA uA V V V V pF ns
652
Typical characteristics
( Tamb=25oC unless otherwise specified )
Package Dimensions in mm (inches)
653

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